Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching
نویسندگان
چکیده
منابع مشابه
Surface Morphology and Formation of Nanostructured Porous GaN by UV-assisted Electrochemical Etching
This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in t...
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The PL of porous GaN sample shows higher intensity with smaller FWHM and red-shifting relative to the as-grown sample. The energy gap for porous GaN sample was smaller compare to the as-grown sample. The SEM surface image of UV-assisted electrochemical etching process is shown a shape and size of pore which was formed on the surface of the GaN, therefore the shape of pores formed was in spheric...
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The fabrication of the 2D GaN-based photonic crystal structure at optical scales, a subμm scale in our case is very challenging. In our work, a double-etching method proved to be feasible to achieve the periodic GaN/air variation. The pattern was defined in a PMMA resist by electron-beam lithography and transferred to SiO2 by reactive ion etching (RIE) in a CF4 plasma and further into GaN by RI...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2016
ISSN: 0021-4922,1347-4065
DOI: 10.7567/jjap.55.04ej12